Growth of branched In-doped ZnO nanowires: Structural and Optical Properties

Abstract

Well‐crystallized branched Indium (In)‐doped ZnO nanowires were grown on silicon substrate via simple thermal evaporation process by using metallic zinc and indium powders in the presence of oxygen. The as‐grown branched nanowires were examined in terms of their morphological, structural and optical properties using field emission scanning electron microscopy (FESEM) attached with energy dispersive spectroscopy (EDS), X‐ray diffraction and room‐temperature photoluminescence (PL) spectroscopy. The morphological and structural characterizations confirmed that the as‐grown products are branched nanowires, grown in high‐density and possessing well‐crystalline structures. The room‐temperature photoluminescence (PL) spectrum exhibited a very small UV emission and a broad band in the visible region indicating the presence of structural defects due to insertion of In‐atoms in the lattices of as‐grown nanowires. The presence of a strong green emission in the room‐temperature PL spectrum demonstrates that these structures can be used for specific applications of ZnO‐based phosphors, such as field emissive display technology, etc.