Growth of Boric Acid Crystallites on the Surface of Boron‐Doped Silicon Carbide Samples

Abstract

White crystallites were visually observed on fractured or polished surfaces of SiC samples (grain sizes below ∼500 nm) during exposure to air at room temperature for several days. Characterization of the crystallites by scanning electron microscopy, secondary ion mass spectroscopy, and X‐ray diffraction identified B(OH)3 crystals with a strong (002) texture. The rate of boric acid formation was determined by a gravimetric experiment. The rate of weight gain increased significantly after an incubation period of 1 week. Nucleation is initially the rate‐limiting process. Subsequently small B(OH)3 crystals form on the surface, whose growth rate is determined by grain boundary diffusion of boron to the SiC surface. An estimated grain boundary diffusion coefficient of boron in SiC was many orders of magnitude higher than extrapolated literature values.