Growth of Bi4Ti3O12 Thin Film by Two-Dimensional RF Magnetron Sputtering with Bi2O3 and TiO2 Targets

Abstract

Ferroelectric Bi4Ti3O12 (BIT) thin films were grown on Pt/Ti/SiO2/Si substrate by a two-dimensional RF magnetron sputtering method. When the RF powers of Bi2O3 and TiO2 were fixed at 100 W and 200 W, respectively, the BIT film exhibited c-axis orientation. The prepared BIT thin film consisted of well-developed grains and exhibited a good polarization–voltage hysteresis loop. The remanent polarization and coercive field were 4.09 µC/cm2 and Ec=56.1 kV/cm, respectively. The dielectric constant was about 330 and the loss factor was 2.18%.