Abstract
Au-mediated Si nanowires (SiNW) have been grown at low temperatures(500–560 °C) on crystalline Si(100) and amorphous Si surfaces by means of low pressure chemical vapour depositionfrom Si2H6 in the 0.05–1.2 mbar range. The influence of the substrates on the nanowire (NW) growthand morphology has been investigated by means of x-ray photoelectron spectroscopy andscanning electron microscopy. No NW growth has been observed on the Au coveredamorphous Si surfaces. On both substrates, the NW exhibit inhomogeneous sidewalls and anew morphology showing NW entrenchment which has been explained as a consequence ofvapour–liquid–solid growth termination due to Au diffusion on the SiNW sidewalls.
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