Abstract
Growth of films was achieved by microwave‐sustained indirect‐plasma enhanced chemical vapor deposition (CVD) using and as the source gases. Layers were deposited on single crystal substrates of Ge and Si and capacitance‐voltage (C‐V), infrared absorption, and ellipsometric measurements were performed. Films grown at 300°–400°C were primarily . High frequency (1 MHz) C‐V measurements exhibited approximately 2V hysteresis and a fast interface state density estimated to be less than .
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