Growth of AlxGa1− xSb bulk material from metallic solution

Abstract

Single crystals of Al x Ga 1− x Sb with a diameter of 15 mm, a length of more than 10 mm and an Al solid composition ranging from 0.06 to 0.1 have been successfully grown with the travelling heater method (THM). Crystals were grown in quartz ampoules in the monoellipsoidal mirror furnace (AMF) with a ring focus. By using the lamp pulsing technique (LPT), microscopic growth rates as a function of grown length could be measured. The growth of ternary compounds has been analysed theoretically. Combined with growth results, we estimated the material transport coefficients of Al and Sb in the Ga solution.