Growth of AlSb on insulating substrates by metal organics chemical vapour deposition

Abstract

Aluminium antimonide thin films were grown on different insulating substrates, i.e. silica, CaF 2, BaF 2, Al 2O 3, GaAs, by metal organics chemical vapour deposition (MO-CVD). Epitaxial AlSb thin films were successfully grown on CaF 2 and GaAs. In the process, the metal alkyls trimethylaluminium (TMA) and trimethylantimony (TMSb) are the sources of Al and Sb, respectively. The thermodynamic study of the system Al-Sb-C-H shows that AlSb could be deposited for given values of the partial pressures of Al, Sb and C in the vapour phase. Other condensed phases could appear, Al 4C 3, Sb.