Abstract
The liquid phase electroepitaxial (LPEE) growth of large diameter, compositionally uniform and low dislocation density ingots of alloy semiconductors, suitable as substrates for device fabrication, is considered. In this regard, the main scientific tasks; (i) generation, propagation and multiplication of dislocations in bulk alloy semiconductors due to composition variations and alloy/substrate lattice mismatch and (ii) the effect of convection in the melt on the growth interface stability and structural perfection of bulk alloy semiconductors, are discussed in detail. Finally, the most efficient means of achieving (i) low dislocation density alloys by employing lateral LPEE overgrowth on partially masked binary substrates, and (ii) large diameter alloys by employing LPEE growth in a static magnetic field of reasonable strength, are identified.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
