Abstract
Abstract Al–N codoped p-type ZnMgO thin films were prepared on three different substrates, namely glass, quartz, and silicon. Significant differences in the crystallinity, surface morphology, and electrical properties on these substrates were investigated by means of x-ray diffraction, field-emission scanning electron microscopy, and Hall-effect measurements. It is demonstrated that the Al donor enhances the incorporation of the N acceptor, resulting in better p-type conductivity. The incorporation of the N acceptor, as well as the Al and Mg, was confirmed x-ray photoelectron spectroscopy. Transmittance and photoluminescence spectra suggested a wider bandgap for the ZnMgO thin films in comparison with ZnO, which is believed to be the result of the incorporation of Mg.
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