Characterization of p-type CuAlO2 thin films grown by chemical solution deposition

Abstract

Single phase p-type CuAlO2 thin films were synthesized through the chemical solution deposition method. The effects of post annealing temperature on the micro-structural, morphological and electrical properties have been studied. Via the optimized annealing treatment, the Hall effect measurements indicate that the CuAlO2 film belongs to the p-type semiconductor with intrinsic hole carriers of 6.71×1016cm−3. The optical direct bandgap of the CuAlO2 film was estimated to be 3.48eV by room temperature photoluminescence measurement, while the transmittance in the visible region was as high as 70%.