Abstract
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia. Indium antimonide is the element base for the widest field of solid state electronics, i.e., optoelectronics. Indium antimonide is used for the fabrication of 3–5 mm range linear photodetectors and photodetector arrays used as light-sensitive material in heat vision systems. Growth heat conditions have been selected and 100 mm [100] indium antimonide single crystals have been grown using the modified two-stage Czochralski technique. The graphite heating unit has been oversized to accommodate a 150 mm crucible and a 4.5–5 kg load. The results of the work have provided for a substantial increase in the yield of photodetectors. The electrophysical properties of the as-grown single crystals have been studied using the Van der Pau method and proved to be in agreement with the standard parameters of undoped indium antimonide. Using the 9-field etch method of pit counting under an optical microscope the dislocation density in the 100 mm single crystals has been measured to be ≤ 100 cm-2which is similar to that for 50 mm single crystals.
Highlights
Indium antimonide (InSb) is a special one among 3–5 semiconductor compounds due to its unique properties: the lowest melting point of these compounds, a narrow band gap, high carrier mobility and good structural perfection. These properties favor the wide use of indium antimonide as the element base for photoelectronic devices and 3–5 mm range IR photodetectors
The electrophysical properties of the indium antimonide single crystals prove to be in agreement with standard data for the undoped material: n = 2 · 1014÷1.5 · 1015 (T = 77 K) [20]
>100 mm diam. [100] indium antimonide single crystals were first grown in Russia using the modified Czochralski technique developed by Giredmet JSC
Summary
Indium antimonide (InSb) is a special one among 3–5 semiconductor compounds due to its unique properties: the lowest melting point of these compounds, a narrow band gap, high carrier mobility and good structural perfection. This technology proved to be quite expensive and power consuming since it requires more than 40 passes of the melt zone at the synthesis and subsequent cleaning stages We considered it expedient to use the advantages of the Czochralski technique as a far less power consuming and faster one as compared with vertical and horizontal directional crystallization for developing a fundamentally new resource-saving technique for the growth of large diameter (> 60 mm) indium antimonide single crystals to combine synthesis and growth in a single process cycle. An important difference is that indium antimonide single crystals are grown on a [100] seed The choice of this growth direction is expedient and economically justified since photodetector array designers use the (100) plane as the working surface.
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