Abstract
• Growth of β-Ga 2 O 3 single crystals was investigated by the vertical Bridgman method. • Three growth orientations perpendicular to the (1 0 0), (0 1 0) and (0 0 1) were selected. • β-Ga 2 O 3 grown ingots 1 in. in diameter were twin-free single crystals. • Different etching rates due to the anisotropy of β-Ga 2 O 3 using H 3 PO 4 were determined. • Line-shaped defects extending in the [0 1 0] direction were observed in three crystals. Growth of β-Ga 2 O 3 single crystals with three growth orientations perpendicular to the (1 0 0), (0 1 0) and (0 0 1) planes was investigated by the vertical Bridgman (VB) method. Three kinds of seed crystals with different orientations were prepared, and crystals with a diameter of 1 in. were obtained under the same growth conditions. Examination by crossed polarizer and X-ray topography shows that the three ingots were twin-free single crystals. For (1 0 0), (0 1 0) and (0 0 1) plane wafers, selective etching using H 3 PO 4 was conducted, then different etching rates due to the anisotropy of β-Ga 2 O 3 were determined and specifically shaped etch pits were also revealed. Line-shaped defects extending in the [0 1 0] direction were observed in the (1 0 0), (0 1 0) and (0 0 1) grown crystals.
Published Version
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