Growth of β-Ga2O3 crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method

Abstract

To investigate the effect of high-power laser heating on the floating zone (FZ) method, a crystal of β-Ga2O3 was grown by the LDFZ method using a newly developed optical system equipped with a 20-kW laser diode (LD) system as a heat source. The growth started from a twin-free seed crystal with a diameter of 7 mm and the diameter of the crystal was increased gradually up to 30 mm. With increasing the diameter of the crystal, three patterns of the beam intensity profile were switched to heat the whole of the molten zone locally and intensively. The intensity profile of the five beamlets irradiating the sample was adjusted with a combination of the zooming by the optical system and the partial blocking by the alumina cylinder. By the proper tuning of the beam profile and the proper selection of the diameter of the feed rod, the molten zone was kept stable against gravity. The obtained crystal has a layer texture without clear facets or cracks. It almost conserves the crystallographic direction of the seed crystal but is twinned except for a twin-free region near the seed crystal.