Abstract
Faceted growth of primary silicon crystals in cast hypereutectic aluminium–silicon alloys is studied by measurement of spacings between successive growth traces observed in microsections. A general equation, derived to specify conditions for stable growth of silicon crystal, is supported by spacing measurements. Some examples of departures from stable silicon growth are studied. Three stages in the development of faceted crystal growth are recognized, changing from spheroidal to faceted to unstable with increasing crystal diameter.
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