Abstract
Correlation between growth mode transition and photoluminescence (PL) properties of Si1−xGex/Si quantum wells (QWs) with high Ge composition grown by gas-source molecular beam epitaxy is investigated. With increasing Ge composition in the QWs, significant deviation from the theoretical calculation is observed for x≳0.4 in the emission energy and the activation energy obtained from the temperature dependence of integrated PL intensity. Transmission electron microscopy reveals emergence of islands for x≳0.4, implying strong correlation with the anomalous PL properties. Observed PL properties are shown to be well explained by the breakdown of two-dimensional growth. An attempt to grow luminescent QWs with flat interfaces is also presented.
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