Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

Abstract

Growth mode of tensile-strained Ge quantum dots on different III–V buffers by molecular beam epitaxy is studied by a combination of reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy. The Ge-QDs growth on the InAlAs buffer lattice matched to InP and on InAs buffer on GaSb follows the Volmer–Weber growth mode with round Ge QDs and no Ge wetting layer, while it obeys the Stranski–Krastanov growth mode on GaSb, AlSb and AlGaSb on GaSb substrates, showing rectangular shaped platelets and a clear Ge wetting layer. The discovery of the Volmer–Weber growth mode is essential to avoid forming a wetting layer and the subsequent antiphase-domain defects when capping III–Vs on Ge-QDs, important for potential optoelectronic applications.