Abstract
The initial stage of YBa2Cu3Ox (Y123) films grown on (100) MgO substrates by liquid phase epitaxy (LPE) was investigated. Y123 films could not be grown on MgO substrates by LPE directly but it was grown successfully on the MgO substrates with Y123 thin films deposited by vapor phase growth methods. In the initial stage Y123 seed film partially dissolved into BaO-CuO solution, and Y123 islands were epitaxially formed on an MgO substrate within one second. It is found that the dissolution phenomenon could be explained by means of the Ostwald ripening mechanism.
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