Abstract
The deposition of yttria-stabilized zirconia films on a NiO–ceria substrate by chemical vapor infiltration (CVI) using ZrCl 4 and YCl 3 as metal sources and NiO–ceria as oxygen source was studied. The resultant films were cubic YSZ with a Y 2O 3 content of 3.7–4.2 mol%, and were transparent and strong. A NiO content of NiO–ceria above 60 mol% increases the growth rate of the YSZ film from about 5 to 25 μm over 2 h, indicating that chemical vapor deposition (CVD) occurred in addition to electrochemical vapor deposition (EVD), whereas NiO contents below 60 mol% does not affect the growth rate, indicating that only electrochemical vapor deposition occurred. The growth mechanism of the YSZ film is determined and a YSZ thin film is successfully fabricated on NiO–ceria to improve mechanical strength.
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