Growth mechanism of DyBa 2Cu 3O x superconducting thin films grown by coevaporation molecular beam epitaxy at low temperatures and growth rates

Abstract

The molecular beam epitaxy (MBE) growth mechanisms of high temperature superconducting (HTSC) thin films DyBa 2Cu 3O x are analyzed at low temperatures and growth rates. The essential influence of the deposition rate on the crystalline perfection and the growth mode is revealed. Both growth rate and temperature control the growth mechanism. There is no epitaxy temperature independent of growth rate and vice versa. It is found that coevaporation MBE with growth rates of 0.01–0.1 Å/s and growth temperatures of 400–440°C results in layer-by-layer (LBL) growth mode and suppression of the multilayer (ML) mechanism.