Abstract
Different surface morphology of ZnO-SiO2 has been successfully grown on glass and silicon substrates using chemical bath deposition method. The dependence on the substrates used on the morphology of ZnO-SiO2 was investigated. The morphology of ZnO- SiO2 on glass substrate was flake-like in form and changes to protruding hemispherical structures when grown on silicon substrate. Elemental composition analysis verified the presence of ZnO and SiO2. Infrared characteristics showed an absorption band for the binding of ZnO and SiO2 and revealed the presence of zinc complexes. We proposed a mechanism on the growth of ZnO-SiO2 on glass and silicon substrate using low temperature deposition technique.
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