Abstract
Palladium silicide is formed through contact reaction of an electron‐deposited Pd thin film and single‐crystal <100> Si substrate by rapid thermal annealing (RTA). The sample temperatures are carefully measured by both optical pyrometer and thermocouples. The annealed samples are analyzed by four‐point probe measurements, x‐ray diffraction (XRD), scanning electron microscopy (SEM), and scanning Auger microprobe analysis (SAM). is the first and only phase detected in the temperature range 310°–460°C. The temperature at which starts to form is 320°C, and the activation energy for the diffusion‐controlled silicide growth is found to be . These results show that the growth mechanism of is the same in both rapid thermal annealing and conventional furnace annealing.
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