Abstract
We demonstrate some specific features of hydrogenated chlorinated crystalline silicon with nanometer sized crystallites (nc-Si:H(Cl)) film fabricated from a H 2-diluted dichlorosilane, SiH 2Cl 2 by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). Contrary to the conventional SiH 4 based nc-Si:H growth, the crystallization occured from the initial growth stage on glass without incubation of an amorphous layer. Best crystallinity was obtained at substrate temperature, T s of 200°C with a 10–20 nm-sized c-Si particles. The crystallinity increased with an increase in the pressure to ∼525 mTorr in the flow rate of SiH 2Cl 2, Fr(SiH 2Cl 2):Fr(H 2)=3:100 (sccm) condition. In addition, the SiH 2Cl 2 based nc-Si:H(Cl) film had smaller optical absorption in the visible range than that of the SiH 4 based nc-Si:H. The growth mechanism is discussed to better comprehend some specific features in terms of the gas phase and surface reactions in comparison with that in SiH 4 and H 2 system.
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