Growth kinetics of dislocation loops in irradiated ceramic materials

Abstract

Ceramic materials are expected to be applied in the future fusion reactor as radio frequency (RF) windows, toroidal insulating breaks and diagnostic probes. The radiation resistance of ceramic materials, degradation of the electrical properties and radiation induced conductivity of these materials under neutron irradiation are determined by the kinetics of the accumulation of point defects in the matrix and point defect cluster formation (dislocation loops, voids, etc.). Under irradiation, due to the ionization process, excitation of electronic subsystem and covalent type of interaction between atoms the point defects in ceramic materials are characterized by the charge state (e.g. an F + center, an oxygen vacancy with a single trapped electron) and the effective charge. For the investigation of radiation resistance of ceramic materials for future fusion applications it is very important to understand the physical mechanisms of formation and growth of dislocation loops and voids under irradiation taking into account in this system the effective charge of point defects. In the present paper the physical mechanisms of dislocation loop growth in ceramic material are investigated. For this aim a theoretical model is suggested for the description of the kinetics of point defect accumulation in the matrix taking into account the charge state of the point defects and the effect of an electric field on diffusion migration process of charged point defects. A self-consistent system of kinetic equations describing the generation of electrical fields near dislocation loops and diffusion migration of charged point defects in elastic and electrical fields is formulated. The solution of the kinetic equations allows to find the growth rate of dislocation loops in ceramic materials under irradiation taking into account the charge state of the point defects and the effect of electric and elastic stress fields near dislocation loop on the diffusion processes.