Abstract
A theoretical analysis of the growth kinetics for quaternary Ga x In 1− x P y As 1− y grown in an InP substrate is carried out in terms of the diffusion-limited growth model. The influence of growth temperature, composition of the initial liquid phase and supercooling of the system on the composition and growth rate of the epilayers is studied. The calculated data are compared with experimental data on the solid solution grown by the step-cooling technique.
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