Abstract
Abstract Ferromagnetic Fe and Fe3Si films are grown on GaAs(001) substrates by molecular beam epitaxy. This review article summarizes the important aspects of the heteroepitaxial growth and the associated structural properties of the Fe/GaAs and Fe3Si/GaAs heterostructures. The magnetic anisotropy of the thin Fe epilayers is analyzed and correlated to the interface structure, which is determined by high-resolution transmission electron microscopy. The structural and electrical properties of Fe3Si alloys depend on the exact stoichiometry and the long-range atomic ordering that is controlled by the growth conditions during the molecular beam epitaxy. The interface reactivity and the thermal stability are critically discussed for both heterosystems.
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