Abstract
The evolution of lateral InSb nanowires (NW) grown on CdTe (001) substrate by increasing of the InSb thickness is reported. At 10-nm growth of InSb, NW with narrow lateral width of ∼ 70 nm and high NW density (∼18 μm−1) are obtained. The evolutional description of InSb NW growth based on the atomic force microscopic characterization is presented. The intrinsic strain at the interface and top InSb layer is revealed by x-ray diffraction analysis. The strong polarization-dependent photoluminescence (PL) of NW is observed. The polarization degree of NW is ∼ 80% and 56% when the excited laser and the emission PL are polarized, respectively. The latter can be attributed to the shape anisotropy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
