Abstract
The molecular beam epitaxial growth of InSb on CdTe (001) substrates has been performed with a specific growth condition, that results in elongated wire morphology. Atomic force microscopy (AFM) and field emission scanning electron microscopy are performed for characterizing the surface morphology. The AFM images of free-standing InSb/CdTe samples reveal the InSb nanowires (NWs) elongation along the [110] direction of the substrate. We speculate the growth mechanism of NWs by attempting to investigate the intrinsic strain by X-ray diffraction (XRD) analysis. The XRD reveals the compressive strain in InSb epilayer and it could be the origin of NW formation. Phonon scatterings from CdTe, InSb and intermixed compounds are probed by Raman spectroscopy. Optical properties of the lateral NWs on CdTe are revealed by photoluminescence measurements.
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