Abstract
Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical vapordeposition have been investigated. The NWs exhibited interesting properties of coplanardeflection at specific angles, either spontaneously, or when induced by other NWs orlithographically patterned barriers. InN NW-based back-gated field effect transistors(FETs) showed excellent gate control and drain current saturation behaviors. Both NWconductance and carrier mobility calculated from the FET characteristics were found toincrease regularly with a decrease in NW diameter. The observed mobility and conductivityvariations have been modeled by considering NW surface and core conduction paths.
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