Abstract
Surface morphologies and photoluminescence (PL) spectra of the InAs/GaAs thin layer structures show the obvious dependence on substrate orientation. In addition, the structures grown on non-(100) substrates show a strong dependence on flux ratio, InAs layer thickness, and growth temperature. In particular, PL spectra and surface morphologies of (211)A specimens grown under several conditions show not only quantum well (QW) features but also three-dimensional microstructure ones. The results suggest that well defined layer-by-layer growth and three-dimensional growth can be controlled by changing the V/III flux ratio and growth temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
