Growth Control of High-Performance InAs/GaSb Type-II Superlattices via Optimizing the In/Ga Beam-Equivalent Pressure Ratio**Supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402402 and 2016YFB0400601), the National Basic Research Program of China (Grant No. 2015CB351902), the National Science and Technology Major Project (2018ZX01005101-010), the National Natural Science Foundation of China (Grant Nos. 61835011 and U1431231), the

Abstract

The performance of type-II superlattice (T2SL) long-wavelength infrared devices is limited by crystalline quality of T2SLs. We optimize the process of growing molecular beam epitaxy deposition T2SL epi-layers on GaSb (100) to improve the material properties. Samples with identical structure but diverse In/Ga beam-equivalent pressure (BEP) ratio are studied by various methods, including high-resolution x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy. We find that appropriately increasing the In/Ga BEP ratio contributes to improving the quality of T2SLs, but too large In BEP will much more easily cause a local strain, which can lead to more InSb islands in the InSb interfaces. The InSb islands melt in the InSb interfaces caused by the change of chemical potential of In atoms may result in the “nail” defects covering the whole T2SLs, especially the interfaces of GaSb-on-InAs. When the In/Ga BEP ratio is about 1, the T2SL material possesses a lower full width at half maximum of +1 first-order satellite peak, much smoother surface and excellently larger area uniformity.