Abstract
Gallium oxide (Ga2O3) nanowires deposited on Si substrates were synthesized by chemical vapor deposition (CVD) of Ga powders with assisted catalyzed by nickel chloride (NiCl2). The microstructure of these nanowires was investigated using high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Four major types of morphology were observed for these Ga2O3 nanomaterials, namely, the particle-fused nanowires, single-crystal nanowires, nanorods and core–shell nanowires. Single crystal and core–shell nanowires were mainly studied. EELS indicated that the amorphous shell was Ga2O3. Because metal catalysts were introduced in the growth process, a vapor-solid (VS) growth mechanism was proposed to explain the single crystal Ga2O3 nanowires.
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