Abstract
Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C. We applied a new source feeding method, known as Discrete Feeding Method (DFM), to PE-ALD TiO2 process for comparing the deposition rate, the physical and electrical film properties with the films deposited by conventional ALD method. Various analytical studies were carried out to investigate the change of TiO2 thin film characteristics due to DFM application. As a result, the optimal process condition was obtained with high physical properties and productivity while keeping electrical characteristics equivalent to those of the conventional ALD condition.
Highlights
Titanium dioxide (TiO2) is a material with a variety of interesting properties such as its high refractive index and transparency in the visible and near-infrared range.1 it is actively utilized for the applications such as coating of CeO2/TiO2 core-shell structure2 and TiO2 shell-based resonators for enhancing Raman scattering without plasmons.3 In addition, it has emerged as an attractive dielectric material for electronic devices such as memory and thin film transistors due to the high dielectric constant property of TiO2.4In the past several decades, there has been a growing demand in the semiconductor industry for a deposition technique that allows uniform deposition on large areas, precise control of thickness, and excellent step coverage on three-dimensional complex structures for data storage applications.5,6 Chemical vapor deposition (CVD) methods are mainly applied at present, but only atomic layer deposition (ALD) fulfills these requirements because of its unique self-limited growth benefiting from alternating surface reactions.7 The unique capability enabled by the ALD technique is the conformal deposition of ultrathin films on high-aspectratio nanostructures.8 Due to this advantage, ALD-TiO2 films have been investigated for applications such as catalysis,9,10 gas barrier layers11 and sensors.12,13
All three specimens used in this experiment were deposited in the same 30 atomic layer deposition (ALD) cycles, but the thickness of the TiO2 film was higher in the order of the Discrete Feeding Method (DFM) 5x, time x5, and POR groups: it matches with the order of the X-ray photoelectron spectroscopy (XPS)
The growth behavior and the film properties were investigated for the plasma enhanced atomic layer deposition (PE-ALD) TiO2 using TDMAT by applying DFM
Summary
Titanium dioxide (TiO2) is a material with a variety of interesting properties such as its high refractive index and transparency in the visible and near-infrared range.1 it is actively utilized for the applications such as coating of CeO2/TiO2 core-shell structure2 and TiO2 shell-based resonators for enhancing Raman scattering without plasmons.3 In addition, it has emerged as an attractive dielectric material for electronic devices such as memory and thin film transistors due to the high dielectric constant property of TiO2.4In the past several decades, there has been a growing demand in the semiconductor industry for a deposition technique that allows uniform deposition on large areas, precise control of thickness, and excellent step coverage on three-dimensional complex structures for data storage applications.5,6 Chemical vapor deposition (CVD) methods are mainly applied at present, but only atomic layer deposition (ALD) fulfills these requirements because of its unique self-limited growth benefiting from alternating surface reactions.7 The unique capability enabled by the ALD technique is the conformal deposition of ultrathin films on high-aspectratio nanostructures.8 Due to this advantage, ALD-TiO2 films have been investigated for applications such as catalysis,9,10 gas barrier layers11 and sensors.12,13. TDMAT showed better production efficiency than titanium isopropoxide (TTIP) in terms of GPC performance based on the results of the previous study.18 Spectroscopic ellipsometry was examined to verify the thickness of the TiO2 films and X-ray photoelectron spectroscopy (XPS) peak analysis was conducted to confirm the chemical composition of the experimental group compared with the conventional group.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
