Abstract
The growth of ferroelectric BaMgF(4) thin films on Si(100), sapphire, and other substrates under ultrahigh vacuum (UHV) conditions is reported. Microstructural characterization of the films using transmission electron microscopy (TEM) revealed that they were oriented crystalline films, although not epitaxial. Ferroelectric hysteresis measurements yielded spontaneous polarization and coercivity values of almost 1.0 muC/cm(2) and 160 kV/cm, respectively. The discrepancy with the bulk ferroelectric values were attributed to the electrical contacts, impurities in the film, and lack of polar axis orientation. Preliminary capacitance-voltage (C-V) hysteresis measurements on a 480-nm-thick BaMgF(4) film yielded a 10.8-V threshold shift (memory window) in response to a +/-10-V programming voltage for a MIS gate structure similar to that of the ferroelectric memory field-effect transistor (FEMFET).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
