Growth and Structure of Monokristalline Fstruilms of AIIBVI compounds

Abstract

AbstractIn vacuum 10−4–10−5 torr monocrystalline thin layers of CdS, CdS, CdTe, ZnS, ZnSe, ZnTe were prepared on mica, (111) surfaces of germanium and gallium arsenide single crystals and (0001) and (1120) cadmium sulphide surfaces. The film structures and some of their properties (conductivity, n‐or p‐mobilities) were shown to depend on temperature conditions of film preparation. It was shown experimentally that in the case of monocrystalline thin films of zinc and cadmium chalcogenides there is a correlation between evaporation and epitaxy temperatures of film preparation. Structure and phase composition of monocrystalline layers are connected with the nature of substrate substances used (including polarity of 〈111〉 direction in gallium arsenide and 〈0001〉 direction in cadmium sulphide).