Abstract
CdZnTe single crystal has been grown on CdTe substrate from Te solution with a traveling heater method under uniform static magnetic induction of 3 T. The growth experiments were carried out with growth rate of 4–10 mm/day and with temperature of 700– 800 ∘ C . The experimental results indicated that applying 3 T obviously improved the morphology of the growth interface in the crystal because of damping effect of the Lorentz force in Te solution, and that improvement of growth interface was beneficial to improve crystal micro-structure of CdZnTe .
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