Growth and structural characterization of ferromagnetic Cr‐doped GaN nanowires

Abstract

AbstractCr‐doped GaN nanowires have been proposed to be ferromagnetic, resulting from a charge overlap between the N 2p and Cr 3d states and to be more robust than Mn‐doped GaN nanowires. We demonstrated the successful fabrication of single‐crystalline GaN nanowires doped with Cr, which show ferromagnetism at room temperature. The structural study shows that these nanowires have diameters of several tens of nm to a few 100 nm and are single crystalline with a Cr doping concentration of about 2.06 at%.