Abstract
Large-diameter single crystals of TeO2 are grown by the Czochralski method in specially designed setups with automatic monitoring of the crystal growth. The degree of perfection of the grown crystals is examined using selective etching and X-ray topography (the Shultz method). The temperature dependence of the microhardness of TeO2 single crystals is investigated for different crystallographic planes, namely, (001), (100), and (110).
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