Abstract
Steeply graded mixed crystals of Zn fCd 1-fS were grown by a vapor phase deposition of CdS onto cleaved slices of ZnS followed by a period of interdiffusion. This produced a graded region between 50 and 100 μm wide with a bandgap gradient d E g/d x varying between 10 1 and 10 2 eV/cm. The diffusion coefficient was determined as a function of position and extrapolates to 10 -10 cm 2/sec for Zn diffusion in CdS and 5 x 10 -12 cm 2/sec for Cd diffusion in ZnS at 1100°C. The crystals have good photoluminescent properties. With UV excitation, the ZnS side shows blue emission at 77 K while the CdS side has red photoluminescence. By irradiating the graded region, the peak of the photoluminescence shifts as a function of the wavelength of excitation. The crystals do not exhibit measurable electroluminescence or dependence of the photoluminescence on applied electrical field. A low minority carrier lifetime is explained by the high density of deep acceptors.
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