Abstract
III–V diluted magnetic semiconductor Ga 1− x Cr x As was successfully synthesized by low-temperature molecular beam epitaxy. High-quality twin-free films were grown with Cr concentrations up to x=0.05 under an As 4/Ga beam flux ratio ∼40. The films showed local ferromagnetic ordering at T<30 K. With higher Cr concentrations or lower As 4/Ga beam flux ratios, the film quality degraded.
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