Abstract
This paper reviews recent studies of the low-temperature chemical vapor deposition of titanium nitride thin films suitable for ULSI applications. In addition to the comprehensive studies available for films grown thermally from TiCl4 and NH3, films deposited from organometallic precursors are discussed, as well as those derived from plasma-enhanced techniques. Two applications of such films for ULSI are as a diffusion barrier between different conductors, and as a nucleation layer for CVD tungsten. Properties of LPCVD TiN for these applications, are covered including film conformality, effectiveness as a diffusion barrier, contact resistance, nucleation of tungsten, and the influence of any residual chlorine.
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