Abstract
Strong photoluminescence and radiative recombination lifetimes longer than 1ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands. The flat islands, with a width at their base in the order of 200nm and a height in the order of 1–2 nm, grow in a spiral mode around dislocations with partial or pure screw character after a passivation of the GaN surface by a preflow of disilane. Their surface density is comparable to the dislocation density of the GaN layer in the order of 108–109cm−2.
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