Abstract
CdTe:Bi crystals were grown by the vertical Bridgman method, varying the nominal Bi-dopant concentration in the range of 1×10 17–1×10 19 at/cm 3. Bi and Bi 1.8−2.3Te precipitates are the most characteristic structural defects in these crystals. Raman spectroscopy studies have shown that Bi traps Te from the CdTe host lattice. Low-temperature photoluminescence in the 1.2–1.6 eV energy region is presented. Several new emissions related to the incorporation of Bi are observed. Semi-insulating CdTe was obtained ( ρ=2×10 10 Ω cm) for dopant concentration of the order of 1×10 17 at/cm 3. The resisitivity decreased to values as lower as 1×10 5 Ω cm for higher concentrations. Photosensitivity studies show an evolution from typical conductivity to shallow acceptor defects-related conduction when the Bi concentration is increased.
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