Abstract
The crystals of La-doped Bi 4 Ti 3 O 12 were grown by a conventional flux growth method using Bi 2 O 3 , TiO 2 and La 2 O 3 . The quantitative analysis of x-ray photoelectron spectra and change of band gap make an estimate of La sites in the La doped Bi 4 Ti 3 O 12 crystals. All of the La ions doped in the Bi 4 Ti 3 O 12 crystals are well substituted with Bi ions. The remanent polarization, P r and the coercive field, E c were 3.2, 5.2 and 0.3 w C/cm 2 , and 5.6, 7.6 and 0.6 kV/cm for Bi 4.3 Ti 3 O 12.4 , Bi 3.65 La 0.47 Ti 3 O 12.17 and Bi 2.76 La 1.67 Ti 3 O 12.65 crystals, respectively. However, Bi 2.76 La 1.67 Ti 3 O 12.65 crystal seems to be not saturated.
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