Abstract
We demonstrated room temperature (RT) intense ultraviolet (UV) emission with wavelength in the range of 300-340 nm from In x Al y Ga 1-x-y N quaternary alloys grown by metal organic vapor phase epitaxy (MOVPE). We found that the UV emission is considerably enhanced by In segregation upon introducing approximately 5% of In into AIGaN. We fabricated multi-quantum wells (MQWs) consisting of In x1 Al y1 Ga 1-x1-y1 N wells and In x2 Al y2 Ga 1-x2-y2 N barriers. The intensity of the 320 nm band emission from the InAlGaN-based MQWs was as strong as that of the 410 nm band emission from InGaN-based QWs at RT. We also fabricated an InAlGaN/InAlGaN single (S)QW and clearly observed In segregation of submicron size from cathodoluminescence (CL) images. The temperature dependence of photoluminescence (PL) emission for InAIGaN-based QWs was greatly improved in comparison with that of GaN- or AlGaN-based QWs. We also achieved a hole concentration of 3 × 10 17 cm -3 for large bandgap (around 4eV) quaternary In x Al y Ga 1-x-y N by Hall measurements. Finally, we fabricated UV light-emitting diodes (LEDs) using InAIGaN active region and achieved efficient 345 nm emission.
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