Abstract
Wurtzite type epilayers of CdS and CdSe have been grown by hot-wall epitaxy and pulsed laser evaporation epitaxy on BaF2, SrF2 and GaAs substrates. The photoluminescence spectra of the epilayers were dominated by the I2 lines in all cases. Optical reflection spectroscopy revealed, that the residual stress is caused mainly by thermal contraction. Under high excitation, pronounced exciton bleaching and formation of an electron-hole plasma were observed in absorption and luminescence, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
