Abstract
Epitaxial ferromagnetic MnSb layers were grown on GaAs(100) substrates by hot-wall epitaxy. Structural and magnetic properties of the MnSb layers are examined by reflection high-energy electron diffraction and vibrating sample magnetometry, respectively. It is found that MnSb with a NiAs-type crystalline structure can be grown epitaxially on GaAs(100) with inclination of the c axis of MnSb towards GaAs[011] and [011] direction by 53°. This inclination growth causes in-plane anisotropy of the magnetic property of the layer. The simple growth technique of the ferromagnetic layers on compound semiconductor substrates indicates high potentiality of development in magnetic material—III-V semiconductor hybrid devices.
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