Abstract
We report the growth and the optical evaluation of highly uniform InGaAs/GaAs quantum dots self-formed by the atomic layer epitaxy (ALE) technique. The dots are advantageous for optical devices, compared with the dots grown by molecular beam epitaxy or metalorganic vapor phase epitaxy via Stranski–Krastanov mode. With the dots grown by the ALE technique, we observed the phonon bottleneck effect for carrier relaxation and demonstrated lasing by current injection.
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