Abstract
The growth of InGaN on GaN by plasma-assisted molecular beam epitaxy is studied using reflection high energy electron diffraction. We find that InGaN follows a layer-by-layer growth mode for low In contents and a Stranski-Krastanov growth mode for In concentrations above a critical value. Using this 2D–3D transition, nanometric islands are grown. These islands are characterized by atomic force microscopy. Their size is found to be small enough to expect strong confinement effects. Photoluminescence experiments show strong blue light emission at room temperature. The temperature dependence of dots' luminescence is compared to that of a quantum well and a bulk sample.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call