Abstract
The Ho3+-doped PbF2 mid-IR laser crystal was successfully grown using the vertical Bridgman method. An intense 2.8 μm emission in Ho:PbF2 crystal was observed for the first time. By analyzing the absorption and emission measurements of the Ho:PbF2 crystal with the Judd-Ofelt theory, the intensity parameters Ω2,4,6, exited state lifetimes, branching ratios, and emission cross-sections were calculated. It is found that the Ho:PbF2 crystal has high fluorescence branching ratio (20.99%), large emission cross section (1.44×10−20 cm2), long fluorescence lifetime (5.4 ms), and high quantum efficiency (88.4%) corresponding to the stimulated emission of Ho3+: 5I6→5I7 transition. The structure of Ho:PbF2 crystal was also analyzed by the Raman spectrum, and found that the Ho:PbF2 crystal possesses low phonon energy of 257 cm−1. We propose that the Ho:PbF2 crystal may be a promising material for 2.8 μm laser applications.
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