Crystal growth and 570 nm emission of Dy3+ doped CeF3 single crystal

Abstract

A Dy3+-doped CeF3 yellow region laser crystal was successfully grown using the Bridgman method. A 570 nm emission in Dy:CeF3 crystal was observed for the first time. By analyzing the absorption and emission measurements of the Dy:CeF3 crystal with the Judd–Ofelt theory, the intensity parameters Ω2,4,6, exited state lifetimes, branching ratios, and emission cross-sections were calculated. It is found that the Dy:CeF3 crystal has high emission cross section (0.9259 × 10−20 cm2) and long fluorescence lifetime (1.53 ms) corresponding to the stimulated emission of Dy3+:4F9/2 → 6H13/2 transition. We propose that the Dy:CeF3 crystal may be a promising material for 570 nm laser applications.